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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1280
DESCRIPTION *With TO-220F package *High breakdown voltage *High power dissipation APPLICATIONS *For use in low frequency power amplifier Color TV vertical deflection output
PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -1.5 25 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1280
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
B
-150
V
VCEsat
Collector-emitter saturation voltage
IC=-500mA;IB=-50mA
-3.0
V
VBE
Base-emitter on voltage
IC=-50mA ; VCE=-4V
-1.0
V A
ICBO
Collector cut-off current
VCB=-120V;IE=0
-1
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-1
A
hFE-1
DC current gain
IC=-50mA ; VCE=-4V
60
200
hFE-2
DC current gain
IC=-500mA ; VCE=-10V
60
fT
Transition frequency
IC=-500mA ; VCE=-10V
4
MHz
COB
Output capacitance
IE=0 ; VCB=-100V;f=1MHz
30
pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1280
Fig.2 Outline dimensions
3


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